Noriaki Okamoto

This inventor holds 21 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignees: Hitachi, Ltd., Renesas Technology Corp.. Active years: 1991-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Noriaki Okamoto. Retrieved from https://idiyas.com/inventor/noriaki-okamoto

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21

% Patents Active = 85.7

Average Co-Inventor Count = 4.8

ph-index = 9

Forward Citations = 306(Granted Patents)

Location History:

Ibaraki, JP (1991 - 1995)
Ibaraki-ken, JP (1997 - 2008)

Company Filing History:

Renesas Technology Corp.

patents

Years Active: 1991-2008

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Areas of Expertise:

Semiconductor Device

Conductive Thin Films

Thermal Oxide Isolation

Device Fabrication

Magnetic Disk

Multi-Layer Films

Stress Gradient

Manufacturing Apparatus

21 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7442593 - Method of manufacturing semiconductor device having conductive thin films (2008-10-28),

2. 7091520 - Method of manufacturing semiconductor device having conductive thin films (2006-08-15),

3. 6949387 - Method of designing a semiconductor device (2005-09-27),

4. 6620704 - Method of fabricating low stress semiconductor devices with thermal oxide isolation (2003-09-16),

5. 6468845 - Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor (2002-10-22),

6. 6379998 - Semiconductor device and method for fabricating the same (2002-04-30),

7. 6346731 - Semiconductor apparatus having conductive thin films (2002-02-12),

8. 6310384 - Low stress semiconductor devices with thermal oxide isolation (2001-10-30),

9. 6118140 - Semiconductor apparatus having conductive thin films (2000-09-12),

10. 6043142 - Semiconductor apparatus having conductive thin films and manufacturing (2000-03-28),

11. 5909052 - Semiconductor device having plural chips with the sides of the chips in (1999-06-01),

12. 5889312 - Semiconductor device having circuit element in stress gradient region by (1999-03-30),

13. 5757573 - Magnetic disk device without slider and having magnetic head mounted (1998-05-26),

14. 5683515 - Apparatus for manufacturing a semiconductor device having conductive (1997-11-04),

15. 5444302 - Semiconductor device including multi-layer conductive thin film of (1995-08-22),

Title: Noriaki Okamoto: Pioneering Innovations in Semiconductor Manufacturing

Introduction:

Noriaki Okamoto, a visionary inventor hailing from Ibaraki-ken, Japan, has cemented his legacy as a trailblazer in the realm of technology. With a remarkable repertoire of 21 patents and a fervent drive for innovation, Okamoto continues to shape the landscape of the industry with his groundbreaking contributions.

Latest Patents:

One of Okamoto's latest patents revolves around the method of manufacturing semiconductor devices with conductive thin films. By utilizing a unique process of depositing amorphous layers and crystallizing them, Okamoto has perfected a technique that ensures optimal electric characteristics of semiconductor devices while preventing defects such as layer peeling and cracks.

Career Highlights:

Having worked with esteemed companies like Hitachi, Ltd. and Renesas Technology Corp., Okamoto has garnered invaluable experience and expertise in the field of technology. His innovative approaches to semiconductor manufacturing have pushed boundaries and set new standards in the industry.

Collaborations:

Throughout his illustrious career, Okamoto has collaborated with esteemed colleagues such as Hideo Miura and Hiroyuki Ohta. Together, they have spearheaded projects that have revolutionized the semiconductor manufacturing process and paved the way for future advancements in technology.

Conclusion:

Noriaki Okamoto's passion for innovation and relentless dedication to pushing the boundaries of technology have established him as a leading figure in the field of semiconductor manufacturing. His patents stand as a testament to his ingenuity and commitment to driving progress in the industry, leaving a profound impact that reverberates far beyond the confines of his laboratory.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]