Hitachi, Ltd.

Renesas Technology Corp.

Noriaki Okamoto

Hideo Miura

Hiroyuki Ohta

Takashi Nakajima

Hiroo Masuda

Jun Murata

Makoto Ogasawara

Yoshiki Kato

Masaki Ohura

Mikio Tokuyama

Mitsuo Usami

Masami Masuda

Masatsugu Kametani

Takao Nakamura

Yoshihiko Miyake

Nobuya Sekiyama

Munetoshi Zen

Toyoji Okuwaki

Ryoichi Ichikawa

Takeshi Miyazaki

Hideaki Tanaka

Shoji Suzuki

Yoshinori Takeuchi

Yuzo Yamaguchi

Kunihiro Maeda

Yokuo Saitoh

Katsuaki Kikuchi

Shinsuke Higuchi

Norikazu Tsumita

Kousaku Wakatsuki

Shinji Sakata

Kenichi Gomi

Akihiro Gotoh

Nobuo Nakagawa

Shoichi Sawahata

Yasunobu Tanizaki

Koosaku Wakatsuki

Mikio Tokyuama

Katuo Uda

Maki Kondo

Eiji Wakimoto

In forming an electrodeon a silicon oxide filmon a semiconductor substratethrough a silicon oxide film, for example, the gate electrodeis structured in a laminated structure of a plurality of polycrystalline silicon layers. The portion of the gate electrodeis formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.

Method of manufacturing semiconductor device having conductive thin films

In forming an electrodeon a silicon oxide filmon a semiconductor substratethrough a silicon oxide film, for example, the gate electrodeis structured in a laminated structure of a plurality of polycrystalline silicon layers. The portion of the gate electrodeis formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layerhaving a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.

A technique for a semiconductor device is provided that includes forming circuit regions on a device formation region and device isolation regions on a semiconductor substrate, a ratio of the width of a device isolation region to the width of adjacent circuit regions thereto is set at 2 to 50. A design method is also provided and includes conducting measurements such as of thicknesses of a pad oxide film and a nitride film, the internal stress of the nitride film, the width of both device formation and isolation regions, the depth of the etched portion of the nitride film for forming the groove in a device isolation region, conducting stress analysis in the proximity of the groove due to thermal oxidation, and setting values pertaining to the width of the device formation region and of the device isolation region which do not lead to occurrence of dislocation.

Method of designing a semiconductor device

A method is provided of fabricating a semiconductor device that includes forming a silicon oxide film on a semiconductor substrate. A silicon nitrite film may be formed on the silicon oxide film. A portion of the silicon nitrite film and the silicon oxide film may be removed at a desired portion. Additionally, a groove may be formed in the semiconductor substrate in the portion in which the silicon oxide film is removed. A part of the silicon oxide film may be etched back around the groove with hydrofluoric acid type at the portion in which the silicon nitrite film is located above. Additionally, an oxidized film may be formed in the groove of the semiconductor substrate and the groove may be oxidized.

Method of fabricating low stress semiconductor devices with thermal oxide isolation

In forming an electrode on a silicon oxide film on a semiconductor substrate through a silicon oxide film for example, the gate electrode is structured in a laminated structure of a plurality of polycrystalline silicon layers The portion of the gate electrode is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.

Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor

A process of contacting sides of a plurality of chips having semiconductor elements formed in a substrate surface, directly to each other on the same &lcub;111&rcub; crystal plane.

Semiconductor device and method for fabricating the same

In forming an electrode on a silicon oxide film on a semiconductor substrate through a silicon oxide film , for example, the gate electrode is structured in a laminated structure of a plurality of polycrystalline silicon layers . The portion of the gate electrode is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.

Semiconductor apparatus having conductive thin films

A width of a circuit device isolation region and a width of a device region formed on a semiconductor substrate are determined in such a manner as to satisfy a condition which prevents the occurrence of dislocation due to thermal oxidation for forming the isolation region. In accordance with the manufacturing scheme, a semiconductor device produced includes a semiconductor substrate, a plurality of circuit regions formed on a device formation region in the semiconductor substrate and having a width of 0.1 to 125 &mgr;m and device isolation regions so formed on the semiconductor substrate as to isolate a plurality of circuit regions from one another and having a width of 0.01 to 2.5 &mgr;m. In such a schemed device, a ratio of the width of the device region to the width of the device isolation region is from 2 to 50. Each device isolation region is a groove formed in the semiconductor substrate by etching a portion, among the pad oxide film formed on the surface of the semiconductor substrate and a nitride film formed on the pad oxide film, existing on the device isolation region, and having a depth of from 0 to 10 nm when measured from the position of the pad oxide film on the semiconductor substrate.

Low stress semiconductor devices with thermal oxide isolation

In forming an electrode on a silicon oxide film on a semiconductor substrate through a silicon oxide film, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers. The portion of the gate electrode is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and of crystallizing (recrystallizing) this amorphous material. Depositing of the amorphous layers is carried out a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and crystallizing the amorphous material are repeated, whereby a laminated structure of polycrystalline layers having a necessary film thickness is obtained. It is possible to prevent deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.

In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.

Semiconductor apparatus having conductive thin films and manufacturing

Prevention of reduction in the production yield due to the increase in the area of a semiconductor chip permits a sophisticated-performance single-chip semiconductor device to be fabricated. This also permits a many-kind small-amount production of semiconductor devices to be implemented. After plural semiconductor chips 2 and 3 are fabricated separately, only defect-free chips of them are selected. The selected defect-free chips are connected in contact between their side walls of their densest faces of atoms of their substrates so that the surfaces 4a and 4b where elements are to be formed are located in the same plane. Thus, even when the chip area is increased, reduction of the production yield can be prevented, thereby permitting a large-area sophisticated-performance single chip semiconductor device to be fabricated. If many kinds of semiconductor chips are prepared and connected in their combination in a variety of forms, it is possible to realize a many-kind small-amount production of semiconductor devices.

Semiconductor device having plural chips with the sides of the chips in

A semiconductor device includes a thermal oxide film for isolation, a semiconductor region that becomes an element forming region with the circumference thereof surrounded by the oxide film and diffused resistance layers in the semiconductor region and provides a structure for controlling resistance value variation of diffused resistors originated in a stress generated at time of forming the oxide film for isolation. A distance between an end portion on a longer side closest to a thermal oxide film of the diffused layer and an end of the thermal oxide film is apart from each other by a predetermined value determined by stress distribution in the semiconductor region or by at least 4 .mu.m or more, the longitudinal direction of the diffused layer portion formed from the end of the thermal oxide film over to a stress distribution (gradient) forming region in the semiconductor region is parallel to the forming direction of the stress gradient, and resistance value distribution is formed parallel to the stress gradient in the diffused layer formed from the end of the thermal oxide film over to the stress distribution forming region in the semiconductor region.

Semiconductor device having circuit element in stress gradient region by

A magnetic disk device for reading information from a magnetic disk surface of a magnetic disk and for writing information on the magnetic disk surface. The magnetic disk device includes an arm disposed at a distance from the magnetic disk surface, a magnetic head support including a flexible member cantilevered to the arm, and at least one magnetic head. The flexible member has a first end attached to the arm and a second end extending toward the magnetic disk surface, and the at least one magnetic head is disposed at the second end of the flexible member. The at least one magnetic head includes a core having a gap and a coil wound around the core. The gap is disposed at a surface of the flexible member facing toward the magnetic disk surface.

Magnetic disk device without slider and having magnetic head mounted

Apparatus for manufacturing a semiconductor device having conductive

In forming an electrode 2 on a silicon 6 oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.

Semiconductor device including multi-layer conductive thin film of

Growing community of inventors

Ibaraki-ken, Japan

Noriaki Okamoto