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For the Inventor, By the Inventor

Atsugi, Japan

Nobuo Watanabe

This inventor holds 12 USPTO granted patents. Top assignee: Canon Kabushiki Kaisha. Active years: 1991-1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nobuo Watanabe. Retrieved from https://idiyas.com/inventor/nobuo-watanabe-901gy3wu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 8

Forward Citations = 162(Granted Patents)


Location History:

  • Atsugi, JP (1991 - 1998)
  • Gotenba, JP (1993 - 1998)

Company Filing History:

goldMedal12 out of 93,085 
 
Canon Kabushiki Kaisha
 patents

Years Active: 1991-1998

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12 patents (USPTO):Explore Patents
1. 5814832 - Electron emitting semiconductor device (1998-09-29),
2. 5760417 - Semiconductor electron emission device (1998-06-02),
3. 5554859 - Electron emission element with schottky junction (1996-09-10),
4. 5414272 - Semiconductor electron emission element (1995-05-09),
5. 5391956 - Electron emitting device, method for producing the same and display (1995-02-21),
6. 5285079 - Electron emitting device, electron emitting apparatus and electron beam (1994-02-08),
7. 5202571 - Electron emitting device with diamond (1993-04-13),
8. 5179532 - Transfering bloch lines using perpendicular and in-plane pulse magnetic (1993-01-12),
9. 5138402 - Semiconductor electron emitting device (1992-08-11),
10. 5107311 - Semiconductor light-emitting device (1992-04-21),
11. 5105383 - Method for detecting the presence of Bloch lines in a magnetic wall (1992-04-14),
12. 4999083 - Method of etching crystalline material with etchant injection inlet (1991-03-12),

Title: Nobuo Watanabe: Innovator in Semiconductor Technology

Introduction

Nobuo Watanabe is a prominent inventor based in Atsugi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work focuses on electron emitting devices, which have important applications in various electronic systems.

Latest Patents

Watanabe's latest patents include an electron emitting semiconductor device and a semiconductor electron emission device. The electron emitting semiconductor device features a P-type semiconductor layer arranged on a semiconductor substrate with a specific impurity concentration. A Schottky barrier electrode is placed on the surface of the P-type layer, with multiple P.sup.+-type area units positioned beneath it. An N.sup.+-type area is also included nearby, designed to facilitate avalanche breakdown in certain areas. The semiconductor electron emission device is engineered to cause avalanche breakdown by applying a reverse bias voltage to a Schottky barrier junction. This device allows for the external emission of electrons from a solid-state surface, enhancing its functionality in electronic applications.

Career Highlights

Watanabe is currently employed at Canon Kabushiki Kaisha, a leading company in imaging and optical products. His innovative work in semiconductor technology has positioned him as a key figure in the industry. His contributions have not only advanced the technology but have also paved the way for future developments in electronic devices.

Collaborations

Watanabe has collaborated with notable coworkers, including Takeo Tsukamoto and Masahiko Okunuki. Their combined expertise has fostered a productive environment for innovation and development in semiconductor technologies.

Conclusion

Nobuo Watanabe's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His work continues to influence advancements in electronic devices and systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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