The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1998
Filed:
Jun. 07, 1995
Toshihiko Takeda, Tokyo, JP;
Takeo Tsukamoto, Atsugi, JP;
Nobuo Watanabe, Atsugi, JP;
Masahiko Okunuki, Tokyo, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
An electron emitting semiconductor device is provided with a P-type semiconductor layer arranged on a semiconductor substrate having an impurity concentration. A Schottky barrier electrode is arranged on a surface of the P-type semiconductor layer. Plural P.sup.+ -type area units are positioned under and facing the Schottky barrier electrode. An N.sup.+ -type area is disposed in the vicinity of the P.sup.+ -type units. The impurity concentration is such as to cause an avalanche breakdown in at least a portion of the surfaces.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile