The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 1998

Filed:

Mar. 27, 1995
Applicant:
Inventors:

Nobuo Watanabe, Gotenba, JP;

Norio Kaneko, Atsugi, JP;

Masahiko Okunuki, Tokyo, JP;

Takeo Tsukamoto, Atsugi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 11 ; 257101 ; 257472 ; 257476 ; 257481 ; 257484 ; 257492 ; 257493 ; 257605 ; 313302 ; 313305 ; 313309 ; 3133 / ; 313368 ;
Abstract

In a semiconductor electron emission device for causing an avalanche breakdown by applying a reverse bias voltage to a Schottky barrier junction between a metallic material or metallic compound material and a p-type semiconductor, and externally emitting electrons from a solid-state surface, a p-type semiconductor region (first region) for causing the avalanche breakdown contacts a p-type semiconductor region (second region) for supplying carriers to the first region, and a semi-insulating region is formed around the first region.


Find Patent Forward Citations

Watanabe, Nobuo. (1998). Semiconductor electron emission device (U.S. Patent No. 5760417). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5760417

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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