The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 1991

Filed:

Oct. 02, 1989
Applicant:
Inventors:

Nobuo Watanabe, Atsugi, JP;

Takeo Tsukamoto, Atsugi, JP;

Toshihiko Takeda, Tokyo, JP;

Haruhito Ono, Ashigara, JP;

Masahiko Okunuki, Itsukaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156628 ; 156643 ;
Abstract

A fine working method of a crystalline material comprises forming an ion injection region in a crystalline material by irradiating a focused ion beam on a crystalline material and subsequently removing a predetermined region of the ion injection region by applying a chemical etching treatment. The method includes performing ion injection where no removal of the predetermined region occurs even if the crystalline material is exposed to an etchant. The predetermined region is removed by injecting an etchant into the ion injection region.


Find Patent Forward Citations

Watanabe, Nobuo. (1991). Method of etching crystalline material with etchant injection inlet (U.S. Patent No. 4999083). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4999083

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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