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For the Inventor, By the Inventor

Kanagawa, Japan

Nobumichi Okazaki

This inventor holds 16 USPTO granted patents and 1 EPO patent. Top assignee: Sony Corporation. Active years: 1989-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nobumichi Okazaki. Retrieved from https://idiyas.com/inventor/nobumichi-okazaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 16

% Patents Active = 43.8

 

Average Co-Inventor Count = 3.1

ph-index = 7

Forward Citations = 146(Granted Patents)


Location History:

  • Kanagawa, JP (1989 - 2010)
  • Nagasaki, JP (2013)

Company Filing History:

goldMedal16 out of 58,145 
 
Sony Corporation
 patents

Years Active: 1989-2013

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16 patents (USPTO):Explore Patents
1. 8446756 - Method of stabilizing data hold operations of a storage device (2013-05-21),
2. 7719873 - Memory and semiconductor device with memory state detection (2010-05-18),
3. 7599210 - Nonvolatile memory cell, storage device and nonvolatile logic circuit (2009-10-06),
4. 7583525 - Method of driving storage device (2009-09-01),
5. 7542335 - Magnetic storage device using ferromagnetic tunnel junction element (2009-06-02),
6. 7471543 - Storage device and semiconductor device (2008-12-30),
7. 7423902 - Storage device and semiconductor apparatus (2008-09-09),
8. 7372718 - Storage and semiconductor device (2008-05-13),
9. 7345908 - Memory device (2008-03-18),
10. 7336520 - Storage device and semiconductor apparatus (2008-02-26),
11. 7242606 - Storage apparatus and semiconductor apparatus (2007-07-10),
12. 7221600 - Arithmetic circuit integrated with a variable resistance memory element (2007-05-22),
13. 7209379 - Storage device and semiconductor device (2007-04-24),
14. 7130224 - Composite storage circuit and semiconductor device having the same composite storage circuit (2006-10-31),
15. 7020010 - Magnetic storage apparatus using ferromagnetic tunnel junction devices (2006-03-28),

Title: Nobumichi Okazaki: Innovator in Storage Device Technology

Introduction

Nobumichi Okazaki is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of storage device technology, holding a total of 16 patents. His work focuses on improving the reliability and efficiency of data storage systems.

Latest Patents

One of Okazaki's latest patents is a method of stabilizing data hold operations of a storage device. This innovative method enhances the reliability of data writing in storage devices that utilize variable resistance elements. By applying a series of write pulses with varying shapes between electrodes and the variable resistance element, the method prevents diffusion loss of the conductive path caused by self-heat generation. This stabilization ensures that the data hold operation remains intact after writing, while also protecting the variable resistance element from damage during the write process.

Another notable patent is for a memory and semiconductor device with memory state detection. This memory system features elements arranged in a matrix, each capable of changing resistance based on applied electric signals. The design includes electric circuits for signal application and detection units to measure current or voltage, allowing for effective monitoring of the memory elements' resistance states.

Career Highlights

Nobumichi Okazaki is currently employed at Sony Corporation, where he continues to innovate in the field of memory and storage technologies. His work has been instrumental in advancing the capabilities of modern storage devices.

Collaborations

Okazaki has collaborated with notable colleagues, including Hidenari Hachino and Hironobu Mori. Their combined expertise has contributed to the development of cutting-edge technologies in the industry.

Conclusion

Nobumichi Okazaki's contributions to storage device technology have made a significant impact on the field. His innovative patents and work at Sony Corporation highlight his role as a leading inventor in this area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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