The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2008
Filed:
Sep. 11, 2006
Chieko Nakashima, Nagasaki, JP;
Hidenari Hachino, Nagasaki, JP;
Hajime Nagao, Nagasaki, JP;
Nobumichi Okazaki, Kanagawa, JP;
Chieko Nakashima, Nagasaki, JP;
Hidenari Hachino, Nagasaki, JP;
Hajime Nagao, Nagasaki, JP;
Nobumichi Okazaki, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A storage device includes a memory cell having a storage element having a characteristic of changing from a state of a high resistance value to a state of a low resistance value by being supplied with a voltage equal to or higher than a first threshold voltage, and changing from a state of a low resistance value to a state of a high resistance value by being supplied with a voltage equal to or higher than a second threshold voltage different in polarity from the first threshold voltage, and a circuit element connected in series with the storage element, wherein letting R be a resistance value of the storage element after writing, V be the second threshold voltage, and I be a current that can be passed through the storage element at a time of erasure, R≧V/I.