The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Oct. 04, 2005
Hajime Nagao, Nagasaki, JP;
Hidenari Hachino, Nagasaki, JP;
Tsutomu Sagara, Nagasaki, JP;
Hironobu Mori, Nagasaki, JP;
Nobumichi Okazaki, Kanagawa, JP;
Wataru Ootsuka, Tokyo, JP;
Tomohito Tsushima, Kanagawa, JP;
Chieko Nakashima, Nagasaki, JP;
Hajime Nagao, Nagasaki, JP;
Hidenari Hachino, Nagasaki, JP;
Tsutomu Sagara, Nagasaki, JP;
Hironobu Mori, Nagasaki, JP;
Nobumichi Okazaki, Kanagawa, JP;
Wataru Ootsuka, Tokyo, JP;
Tomohito Tsushima, Kanagawa, JP;
Chieko Nakashima, Nagasaki, JP;
Sony Corporation, Tokyo, JP;
Abstract
A storage device includes a storage element having characteristics such that the resistance value thereof changes from a high state to a low state as a result of an electrical signal higher than or equal to a first threshold signal being applied and changes from a low state to a high state as a result of an electrical signal higher than or equal to a second threshold signal whose polarity differs from that of the first threshold signal being applied; and a circuit element that is connected in series to the storage element and that serves as a load, the storage element and the circuit element forming a memory cell, and the memory cells being arranged in a matrix, wherein the resistance value of the circuit element when the storage element is read differs from the resistance value when the storage element is written or erased.