Toda, Japan

Nobuhito Makino



Average Co-Inventor Count = 2.6

ph-index = 2

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 1995-2010

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4 patents (USPTO):Explore Patents

Title: Nobuhito Makino: Innovator in Vapor Phase Growth Technology

Introduction

Nobuhito Makino is a distinguished inventor based in Toda, Japan. He has made significant contributions to the field of vapor phase growth technology, holding a total of 4 patents. His work focuses on developing apparatuses that enhance the uniformity and efficiency of thin film growth on wafers.

Latest Patents

One of his notable patents is a vapor phase growth apparatus designed to provide uniform thin film growth across the surface of a wafer. This apparatus includes a sealable reactor, a wafer holder, a gas supply member, a heating member, and a heat uniformizing member. The innovative design allows for the effective supply of raw material gas in a high-temperature environment, ensuring optimal film formation on the wafer's surface. Another patent involves a similar vapor-phase growth apparatus that features a hermetically closable reaction furnace and a wafer container. This design aims to create a grown film on the wafer's front surface by maintaining high temperatures while supplying source gas.

Career Highlights

Nobuhito Makino has worked with prominent companies such as Nippon Mining & Metals Co., Ltd. and Japan Energy Corporation. His experience in these organizations has contributed to his expertise in vapor phase growth technology and its applications in various industries.

Collaborations

Throughout his career, Makino has collaborated with notable colleagues, including Eiichi Shimizu and Manabu Kawabe. These partnerships have fostered innovation and advancements in the field of thin film technology.

Conclusion

Nobuhito Makino's contributions to vapor phase growth technology have established him as a key figure in the industry. His innovative patents and collaborations reflect his commitment to advancing the field and enhancing the efficiency of thin film growth processes.

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