The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Oct. 16, 2002
Eiichi Shimizu, Toda, JP;
Nobuhito Makino, Toda, JP;
Eiichi Shimizu, Toda, JP;
Nobuhito Makino, Toda, JP;
Nippon Mining & Metals Co., Ltd., Tokyo, JP;
Abstract
A vapor-phase growth apparatus includes: at least a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position, a gas supply member for supplying a source gas toward the wafer, and a heating member for heating the wafer, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying the source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container is made of a single material or a single member, and has a ratio R/R, which is not less than 0.4 to not more than 1.0, where Ris a heat resistance for a heat transfer route from a rear surface of the wafer container toward the front surface of the wafer, and Ris a heat resistance for a heat transfer route from the rear surface of the wafer container toward a front surface of the wafer container.