Nippon Mining & Metals Co., Ltd.

Japan Energy Corporation

Nobuhito Makino

Eiichi Shimizu

Ryuichi Hirano

Manabu Kawabe

Masashi Nakamura

Eiji Ikeda

Shigeo Katsura

It is to provide a vapor phase growth apparatus which can perform vapor phase growth of a thin film having a good uniformity throughout a surface of a wafer. The vapor phase growth apparatus includes at least a sealable reactor, a wafer containing member (wafer holder) installed within the reactor and having a wafer mounting portion (pocket hole) on a surface thereof for holding a wafer, a gas supply member (gas inlet pipe) for supplying raw material gas towards the wafer, a heating member (heater) for heating the wafer, and a heat uniformizing member (susceptor) for holding the wafer containing member and uniformizing heat from the heating member, wherein raw material gas is supplied into the reactor in a high temperature environment while heating the wafer by using the heating member via the heat uniformizing member and the wafer containing member, to form a film grown on a surface of the wafer, and wherein a recess portion depressed in a dome shape is formed at a back side of the wafer containing member.

Vapor phase growth apparatus

A vapor-phase growth apparatus includes: at least a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position, a gas supply member for supplying a source gas toward the wafer, and a heating member for heating the wafer, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying the source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container is made of a single material or a single member, and has a ratio R/R, which is not less than 0.4 to not more than 1.0, where Ris a heat resistance for a heat transfer route from a rear surface of the wafer container toward the front surface of the wafer, and Ris a heat resistance for a heat transfer route from the rear surface of the wafer container toward a front surface of the wafer container.

Vapor-phase growth apparatus

A vapor-phase growth apparatus including a reaction furnace, a wafer container disposed in said furnace, a gas supply member, and a heating member, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying a source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container includes a heat flow control section having a space for disposing a wafer; and a heat flow transmitting section joined to the heat flow control section. The contact heat resistance Rbetween the heat flow control section and the heat flow transmitting section is not less than 1.0&#xd7;10mK/W to not more than 5.0&#xd7;10mK/W. The heat flow control section is made of a material having a coefficient of thermal conductivity 5 to 20 times that of the wafer.

Vapor-phase epitaxial apparatus and vapor phase epitaxial method

A substrate wafer for epitaxy of a compound semiconductor single crystal and an epitaxy using the substrate wafer are disclosed. Where the orientation off-angle from the &lt;100&gt; plane of an area available for device formation of a surface of the substrate wafer is .theta..degree., and the growth rate on an epitaxial layer on the substrate wafer is V .mu.m/hr, and the growth temperature of the epitaxial layer is T K, the orientation off-angle .theta..degree. is given by the following expression: ##EQU1## where 0.1.ltoreq.V.ltoreq.10 and 853.ltoreq.T.ltoreq.1023. The substrate wafer is capable of significantly reducing the number of teardrop-like hillock defects which appear on the surface of the epitaxial layer and of increasing the smoothness of the surface of the epitaxial layer.

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Toda, Japan

Nobuhito Makino