The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2008
Filed:
Oct. 16, 2002
Eiichi Shimizu, Toda, JP;
Nobuhito Makino, Toda, JP;
Eiichi Shimizu, Toda, JP;
Nobuhito Makino, Toda, JP;
Nippon Mining & Metals Co., Ltd., Tokyo, JP;
Abstract
A vapor-phase growth apparatus including a reaction furnace, a wafer container disposed in said furnace, a gas supply member, and a heating member, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying a source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container includes a heat flow control section having a space for disposing a wafer; and a heat flow transmitting section joined to the heat flow control section. The contact heat resistance Rbetween the heat flow control section and the heat flow transmitting section is not less than 1.0×10mK/W to not more than 5.0×10mK/W. The heat flow control section is made of a material having a coefficient of thermal conductivity 5 to 20 times that of the wafer.