Matsumoto, Japan

Nobuhiro Higashi

USPTO Granted Patents = 6 

Average Co-Inventor Count = 1.3

ph-index = 1


Location History:

  • Nagano, JP (2019 - 2023)
  • Matsumoto, JP (2021 - 2023)

Company Filing History:


Years Active: 2019-2025

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6 patents (USPTO):Explore Patents

Title: Nobuhiro Higashi: Innovator in Semiconductor Technology

Introduction

Nobuhiro Higashi is a prominent inventor based in Matsumoto, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on improving the reliability and efficiency of semiconductor devices.

Latest Patents

Higashi's latest patents include innovative designs for semiconductor apparatus and methods for manufacturing these devices. One notable patent describes a semiconductor apparatus that features a semiconductor device, a first external connection terminal, and an insulating resin enclosure. This design enhances the connection between the semiconductor device and the external terminal, ensuring better performance. Another patent outlines a manufacturing method for semiconductor devices that involves sealing a metal plate with a semiconductor chip and control IC using injected molding resin. This method significantly reduces the generation of voids around critical components, thereby preventing electrical discharge and enhancing device reliability.

Career Highlights

Nobuhiro Higashi is currently employed at Fuji Electric Co., Ltd., where he continues to develop cutting-edge semiconductor technologies. His expertise in this field has positioned him as a key player in advancing semiconductor manufacturing processes.

Collaborations

Higashi has collaborated with notable colleagues, including Akira Furuta and Kenichi Okayama, to further enhance the innovation and development of semiconductor technologies.

Conclusion

Nobuhiro Higashi's contributions to semiconductor technology through his patents and collaborative efforts have made a significant impact on the industry. His work continues to pave the way for advancements in semiconductor reliability and efficiency.

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