Fuji Electric Co., Ltd.

Nobuhiro Higashi

Akira Furuta

Daiki Yoshida

Kenichi Okayama

A semiconductor apparatus includes: (i) a semiconductor device; (ii) a first external connection terminal configured to be connected to the semiconductor device, and includes a first surface; and a second surface; and (iii) an insulating resin enclosure. The first external connection terminal includes: a base part that is embedded in the insulating resin enclosure; and a protruding part that protrudes from the inner wall of the insulating resin enclosure. The second surface includes: a first part that corresponds to the protruding part; and a second part that corresponds to the base part and is exposed by the first recessed part. The first part and the second part are continuous with each other along a second direction. The first and second extending parts are spaced apart from each other in a third direction. Each of the first and second extending parts extends along the first direction from a position corresponding to the second surface of the first external connection terminal.

Semiconductor apparatus and manufacturing method for semiconductor apparatus

A manufacturing method of a semiconductor device includes sealing a metal plate on which a semiconductor chip and a control IC are mounted by injecting molding resin raw material into a cavity from an inlet, filling the cavity with the molding resin raw material, and discharging excessive molding resin raw material from an outlet. In the case of the semiconductor device manufactured in this way, at least, generation of voids is reduced in an area around the semiconductor chip and the control IC. Thus, occurrence of an electrical discharge in the semiconductor device is reduced, and deterioration of the reliability of the semiconductor device is prevented.

Semiconductor device and manufacturing method thereof

A semiconductor device includes: a semiconductor chip; a case having a frame portion that has an inner wall portion surrounding an housing area in which the semiconductor chip is disposed; a buffer member provided on at last part of the inner wall portion of the case on a side of the housing area; a low expansion member provided on said at least part of the inner wall portion with the buffer member interposed therebetween on the side of the housing area; and a sealing member that seals the housing area, wherein the buffer member has a smaller elastic modulus than the case and the sealing member, and wherein the low expansion member has a smaller linear expansion coefficient than the case and the sealing member.

Semiconductor device

A semiconductor module includes a laminated substrate that includes a heat radiating plate, and an insulation layer having a conductive pattern thereof and being disposed on a top surface of the heat radiating plate, a semiconductor element disposed on a top surface of the conductive pattern, an integrated circuit that controls driving of the semiconductor element, a control-side lead frame having a primary surface on which the integrated circuit is disposed, and a mold resin that seals the laminated substrate, the semiconductor element, the integrated circuit, and the control-side lead frame. The control-side lead frame has a rod-shaped first pin having a first end, a first end side of the first pin extending toward the top surface of the heat radiating plate, and the heat radiating plate has at least one insertion hole into one of which the first end of the first pin is press-fitted.

Semiconductor module and semiconductor module manufacturing method

A semiconductor apparatus is provided, including: a housing; a heat-dissipation substrate; a first semiconductor chip provided on the heat-dissipation substrate; a temperature detecting unit provided on the housing; a first thermoelectric member electrically connecting the first semiconductor chip and the temperature detecting unit; and a second thermoelectric member electrically connecting the first semiconductor chip and the temperature detecting unit, the second thermoelectric member being made of a different material than the first thermoelectric member. The thermal conductivity of the heat-dissipation substrate is higher than the thermal conductivity of the housing.

Semiconductor apparatus

A semiconductor module includes a high-side switching device and a low-side switching device that respectively form an upper arm and a lower arm, freewheeling diodes that are respectively connected to the switching devices in anti-parallel, and a high-side driver circuit and a low-side driver circuit that respectively switch the high-side switching device and the low-side switching device ON and OFF. In the upper arm, an anode electrode of the freewheeling diode and a reference voltage electrode of the high-side driver circuit are directly connected via a first wiring, and the anode electrode of the freewheeling diode is connected to a reference voltage electrode of the high-side switching device via a second wiring having an inductance.

Growing community of inventors

Matsumoto, Japan

Nobuhiro Higashi