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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11817327 B1

PDFFull Text
Date of Patent:
Nov. 14, 2023

Filed:

Aug. 30, 2021

Semiconductor device and manufacturing method thereof

Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventors:

Nobuhiro Higashi, Matsumoto, JP;

Akira Furuta, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Robert G Bachner

Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/495 (2006.01); H01L 23/50 (2006.01); H01L 25/18 (2023.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 21/565 (2013.01); H01L 23/49575 (2013.01); H01L 23/50 (2013.01); H01L 24/05 (2013.01); H01L 24/48 (2013.01); H01L 25/07 (2013.01); H01L 25/18 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/48091 (2013.01);
Abstract

A manufacturing method of a semiconductor device includes sealing a metal plate on which a semiconductor chip and a control IC are mounted by injecting molding resin raw material into a cavity from an inlet, filling the cavity with the molding resin raw material, and discharging excessive molding resin raw material from an outlet. In the case of the semiconductor device manufactured in this way, at least, generation of voids is reduced in an area around the semiconductor chip and the control IC. Thus, occurrence of an electrical discharge in the semiconductor device is reduced, and deterioration of the reliability of the semiconductor device is prevented.

Find Patent Forward Citations

Higashi, Nobuhiro. (2023). Semiconductor device and manufacturing method thereof (U.S. Patent No. 11817327). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11817327

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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