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For the Inventor, By the Inventor

Kawasaki, Japan

Nobuaki Takashina

USPTO Granted Patents = 11

Average Co-Inventor Count = 3.2

ph-index = 6

Forward Citations = 135(Granted Patents)


Company Filing History:

goldMedal11 out of 39,244 
 
Fujitsu Corporation
 patents

Years Active: 1993-2003

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11 patents (USPTO):Explore Patents
1. 6646920 - Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics (2003-11-11),
2. 6611464 - Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics (2003-08-26),
3. 6563738 - Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics (2003-05-13),
4. 5959887 - Electrically erasable programmable nonvolatile semiconductor memory (1999-09-28),
5. 5815440 - Semiconductor memory device with electrically controllable threshold (1998-09-29),
6. 5666314 - Semiconductor memory device for selecting and deselecting blocks of word (1997-09-09),
7. 5581107 - Nonvolatile semiconductor memory that eases the dielectric strength (1996-12-03),
8. 5463583 - Non-volatile semiconductor memory device (1995-10-31),
9. 5452251 - Semiconductor memory device for selecting and deselecting blocks of word (1995-09-19),
10. 5406524 - Nonvolatile semiconductor memory that eases the dielectric strength (1995-04-11),
11. 5237530 - Frasable non-volatile semiconductor memory device having read/write test (1993-08-17),

Title: Innovations of Nobuaki Takashina in Semiconductor Memory Technology

Introduction

Nobuaki Takashina is a prominent inventor known for his significant contributions to the field of semiconductor memory devices. Based in Kawasaki, Japan, he has been instrumental in developing innovative technologies that enhance the performance and reliability of memory systems. With a total of 11 patents to his name, Takashina's work has had a lasting impact on the industry.

Latest Patents

One of Takashina's latest patents is for a nonvolatile semiconductor memory device that features electrically and collectively erasable characteristics. This device includes a plurality of word lines and bit lines, with memory cells formed of MIS transistors located at their intersections. The threshold voltages of these transistors can be externally controlled, allowing for efficient data management. Another notable patent describes a semiconductor memory device that utilizes a write circuit and a sense amplifier to improve data writing and reading processes. This innovation effectively employs redundant word lines, enhancing the yield and performance of the memory device.

Career Highlights

Nobuaki Takashina has spent a significant portion of his career at Fujitsu Corporation, where he has been able to apply his expertise in semiconductor technology. His work has not only advanced the capabilities of memory devices but has also contributed to the overall growth of the company in the competitive tech landscape.

Collaborations

Throughout his career, Takashina has collaborated with notable colleagues such as Yasushi Kasa and Kiyoshi Itano. These partnerships have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

Nobuaki Takashina's innovative work in semiconductor memory devices has established him as a key figure in the field. His patents reflect a deep understanding of technology and a commitment to improving memory systems. The impact of his contributions will continue to influence the industry for years to come.

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