The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 1996
Filed:
Dec. 14, 1994
Shouichi Kawamura, Kawasaki, JP;
Nobuaki Takashina, Kawasaki, JP;
Yasushi Kasa, Kawasaki, JP;
Kiyoshi Itano, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
An object of the present invention is to ease the dielectric strength requirements for transistors forming power supply circuits or the like. A nonvolatile semiconductor memory of the present invention includes a plurality of memory cells, each of which is composed of a floating gate, a control gate, a drain, and a source, and a negative voltage generating means whose generated negative voltage is applied to the control gate for drawing a charge stored in the floating gate into a channel or the source when stored data is erased electrically. The nonvolatile memory of the present invention further includes positive erasure voltage generating means, and a positive voltage higher than a conventional supply voltage generated by the positive erasure voltage generating means is applied to the channel or the source.