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Kanagawa, Japan

Noboru Matsuda

USPTO Granted Patents = 14

Average Co-Inventor Count = 2.7

ph-index = 8

Forward Citations = 200(Granted Patents)

Location History:

Kawasaki, JP (1996 - 1999)
Yokohama, JP (2000 - 2007)
Kanagawa, JP (2006 - 2007)
Kanagawa-ken, JP (2007)
Hyogo-ken, JP (2012)
Ibo Hyogo, JP (2020)

Company Filing History:

14 out of 52,711

Kabushiki Kaisha Toshiba

Years Active: 1996-2020

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14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. RE48259 - Semiconductor device (2020-10-12),

2. 8299523 - Semiconductor device (2012-10-30),

3. 8269272 - Semiconductor device and method for manufacturing the same (2012-09-18),

4. 7268392 - Trench gate semiconductor device with a reduction in switching loss (2007-09-11),

5. 7227223 - Power MOS transistor having trench gate (2007-06-05),

6. 7176521 - Power semiconductor device (2007-02-13),

7. 7049657 - Semiconductor device having a trench-gate structure (2006-05-23),

8. 7045858 - Semiconductor device and method of manufacturing the same (2006-05-16),

9. 6060747 - Semiconductor device (2000-05-09),

10. 5917228 - Trench-type schottky-barrier diode (1999-06-29),

11. 5770514 - Method for manufacturing a vertical transistor having a trench gate (1998-06-23),

12. 5726088 - Method of manufacturing a semiconductor device having a buried insulated (1998-03-10),

13. 5610422 - Semiconductor device having a buried insulated gate (1997-03-11),

14. 5578508 - Vertical power MOSFET and process of fabricating the same (1996-11-26),

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