Portland, OR, United States of America

Nita Chandrasekhar

USPTO Granted Patents = 2 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2022-2024

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2 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Nita Chandrasekhar

Introduction

Nita Chandrasekhar, an accomplished inventor based in Portland, Oregon, has made significant strides in the field of semiconductor technology. With a total of two patents to her name, she has contributed to advancements that enhance the manufacturing processes of integrated circuits. Her work reflects a combination of technical expertise and innovative thinking in a fast-evolving industry.

Latest Patents

Nita's latest patents showcase her contributions to electrical isolation of transistor structures and the deposition of graphene on dielectric surfaces. One patent focuses on "Gap fill dielectrics for electrical isolation of transistor structures in the manufacture of integrated circuits." This invention addresses the challenges associated with semiconductor features and dielectric materials comprising silicon and oxygen. The patented approach utilizes an atomic layer deposition process that incorporates a silicon deposition phase alongside an oxidation phase enhanced by plasma-activated nitrogen species. This technique allows the dielectric material to fill gaps effectively, especially in areas with low aspect ratios, thus improving the performance of integrated circuits.

Her second patent, titled "Deposition of graphene on a dielectric surface for next generation interconnects," details an integrated circuit structure that comprises dielectric material with an opening defined by sides and a bottom. In this innovation, a graphene barrier material is applied to the sides and bottom of the opening, followed by the deposition of conductive metal to fill the remainder of the opening. The use of non-hydrogen-based plasma pretreatment is pivotal, as it ensures the removal of passivation and activates the dielectric surface, allowing for effective formation of the graphene barrier.

Career Highlights

Nita Chandrasekhar's contributions to Intel Corporation reflect her commitment to innovation in semiconductor technology. Her expertise in materials science and focus on enhancing the performance of integrated circuits position her as a significant figure in her field. The patents she has secured not only underscore her inventiveness but also her ability to address complex technical challenges faced in the industry.

Collaborations

Throughout her career, Nita has worked alongside talented professionals, including her colleagues AKM Shaestagir Chowdhury and Michael Makowski. These collaborations have allowed her to combine diverse perspectives and skills, yielding innovative solutions within the realm of integrated circuits.

Conclusion

Nita Chandrasekhar's work exemplifies the spirit of innovation that drives progress in technology. With her patents, she has contributed to the evolution of semiconductor manufacturing, paving the way for next-generation integrated circuits. As she continues her journey at Intel Corporation, her ongoing research and collaborations are expected to yield even more groundbreaking advancements in the field.

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