Hefei, China

Ning Xi

This inventor holds 8 USPTO granted patents and 1 published patent application and 2 EPO patents. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2023-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ning Xi. Retrieved from https://idiyas.com/inventor/ning-xi-1ksp2q7v

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 8 

% Patents Active = 100.0

 

Average Co-Inventor Count = 1.3

ph-index = 1


Company Filing History:


Years Active: 2023-2025

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8 patents (USPTO):Explore Patents

Title: Ning Xi - Innovator in Semiconductor Technology

Introduction

Ning Xi is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on innovative semiconductor structures and manufacturing methods that enhance memory technology.

Latest Patents

Ning Xi's latest patents include advancements in semiconductor structures and methods for their manufacturing. One of his notable inventions is a semiconductor structure that features a source and a drain arranged in a substrate. This structure includes a gate dielectric layer that covers a sidewall and a bottom portion of a trench defined between the source and the drain. Additionally, a gate structure is arranged in the trench, made from metal or metal compounds. The design also incorporates a gate adjustment layer positioned between the gate dielectric layer and the gate structure. This innovative approach includes a first control area covered with the gate adjustment layer and a second control area that is not covered, enhancing the overall performance of the semiconductor device.

Another significant patent involves a semiconductor structure formed by a specific method. This structure consists of a substrate with an insulating layer, metal conductive layers on the insulating layer, and an isolation structure located between adjacent metal conductive layers. These inventions reflect Ning Xi's commitment to advancing semiconductor technology.

Career Highlights

Ning Xi is currently employed at Changxin Memory Technologies, Inc., where he continues to push the boundaries of semiconductor innovation. His expertise and dedication have positioned him as a key player in the industry, contributing to the development of cutting-edge memory technologies.

Collaborations

Ning Xi collaborates with talented individuals in his field, including Peimeng Wang and Meng Zhu. Their combined efforts foster an environment of innovation and creativity, leading to groundbreaking advancements in semiconductor technology.

Conclusion

Ning Xi's contributions to semiconductor technology through his patents and work at Changxin Memory Technologies, Inc. highlight his role as a leading inventor in the field. His innovative approaches continue to shape the future of memory technology and semiconductor structures.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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