The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Sep. 28, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Ning Xi, Anhui, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
There are provided a semiconductor structure and a method for manufacturing the same, and a memory. The method for manufacturing a semiconductor structure includes: providing a stack structure including a first dielectric layer containing a first element; forming a first groove at least penetrating through the first dielectric layer by a first etching process, wherein after the first etching process, a first etch residue is formed in the first groove; forming a first protective layer covering a side wall, at the first dielectric layer, of the first groove; and performing a first cleaning on the stack structure formed with the first protective layer to remove the first etch residue. The first groove is configured for forming a storage cell.