Reading, MA, United States of America

Nicholas Pt Bateman

USPTO Granted Patents = 11 

 

Average Co-Inventor Count = 3.1

ph-index = 4

Forward Citations = 57(Granted Patents)


Location History:

  • Burlington, MA (US) (2010 - 2013)
  • Reading, MA (US) (2012 - 2018)

Company Filing History:


Years Active: 2010-2018

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11 patents (USPTO):Explore Patents

Title: **Nicholas Pt Bateman: Innovator in Ion Implantation Technology**

Introduction

Nicholas Pt Bateman, an accomplished inventor based in Reading, Massachusetts, has made significant contributions to the field of ion implantation technology. With a remarkable portfolio of 11 patents, Bateman is known for his innovative approaches to improving ion beam quality, which has implications for semiconductor manufacturing and related industries.

Latest Patents

Among Bateman's latest patents is one titled "Boron implanting using a co-gas." This patent reveals an apparatus and methods aimed at enhancing the ion beam quality of a halogen-based source gas. Notably, the introduction of a noble gas, such as argon, within the ion source chamber can unexpectedly increase the proportion of desirable ion species while reducing contaminants and halogen-containing ions. This advancement is particularly advantageous for non-mass analyzed implanters, where all ions are directly implanted into the workpiece.

Another significant innovation from Bateman is the "Method of improving ion beam quality in an implant system." This patent addresses the challenge of contaminants being extracted along with the desired ions, as these impurities can introduce defects into the workpiece. By incorporating a diluent gas in the ion chamber, such as germane or silane, Bateman’s method aims to mitigate the adverse effects of halogen gases on the chamber surfaces, thereby enhancing the purity of the extracted ion beam.

Career Highlights

Nicholas Bateman is currently an innovator at Varian Semiconductor Equipment Associates, Inc., a company recognized for its cutting-edge technology in semiconductor fabrication equipment. Throughout his career, Bateman has played a pivotal role in developing systems that significantly improve ion implantation precision and efficiency, reinforcing his reputation as a leader in the industry.

Collaborations

Throughout his journey, Bateman has collaborated with talented individuals such as Atul Gupta and Benjamin B. Riordon. Together, they have contributed to the advancement of ion implantation technology, sharing expertise and insights that foster innovation in this critical area of semiconductor manufacturing.

Conclusion

Nicholas Pt Bateman's innovative spirit and technical prowess have positioned him as a prominent figure in the semiconductor field. His contributions, exemplified by his latest patents, continue to push the boundaries of ion implantation technology, ensuring higher quality and more efficient manufacturing processes. As he continues to work with colleagues and drive advancements, Bateman's influence will undoubtedly leave a lasting impact on the industry.

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