The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Mar. 04, 2009
Nicholas Bateman, Burlington, MA (US);
Atul Gupta, Beverly, MA (US);
Christopher Hatem, Salisbury, MA (US);
Deepak Ramappa, Cambridge, MA (US);
Nicholas Bateman, Burlington, MA (US);
Atul Gupta, Beverly, MA (US);
Christopher Hatem, Salisbury, MA (US);
Deepak Ramappa, Cambridge, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A method of tailoring the dopant profile of a substrate by utilizing two different dopants, each having a different diffusivity is disclosed. The substrate may be, for example, a solar cell. By introducing two different dopants, such as by ion implantation, furnace diffusion, or paste, it is possible to create the desired dopant profile. In addition, the dopants may be introduced simultaneously, partially simultaneously, or sequentially. Dopant pairs preferably consist of one lighter species and one heavier species, where the lighter species has a greater diffusivity. For example, dopant pairs such as boron and gallium, boron and indium, phosphorus and arsenic, and phosphorus and antimony, can be utilized.