The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Oct. 11, 2011
John Graff, Swampscott, MA (US);
Nicholas Bateman, Reading, MA (US);
Joseph Olson, Beverly, MA (US);
Benjamin Riordon, Newburyport, MA (US);
John Graff, Swampscott, MA (US);
Nicholas Bateman, Reading, MA (US);
Joseph Olson, Beverly, MA (US);
Benjamin Riordon, Newburyport, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
An improved method of fabricating an interdigitated back contact (IBC) solar cell is disclosed. A first mask is used to perform a patterned ion implantation of n-type dopant to create the back surface field. A second mask is then used to create the p-type emitter on the same surface. The second mask may be aligned to the n-type implant, and may be used in a plurality of orientations to create the desired p-type emitter. In some embodiments, a p-type blanket implant is performed as well. In some embodiments, a doping gradient is created.