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For the Inventor, By the Inventor

Fort Collins, CO, United States of America

Nicholas J Szluk

This inventor holds 9 USPTO granted patents. Top assignee: Ncr Corporation. Active years: 1987-1991.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nicholas J Szluk. Retrieved from https://idiyas.com/inventor/nicholas-j-szluk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 9

% Patents Active = 100.0

Average Co-Inventor Count = 2.3

ph-index = 9

Forward Citations = 254(Granted Patents)


Location History:

  • Fort Collins, CO (US) (1987)
  • Albuquerque, NM (US) (1987 - 1991)

Company Filing History:

goldMedal9 out of 4,492 
 
Ncr Corporation
 patents

Years Active: 1987-1991

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9 patents (USPTO):Explore Patents
1. 4997780 - Method of making CMOS integrated devices in seeded islands (1991-03-05),
2. 4799097 - CMOS integrated devices in seeded islands (1989-01-17),
3. 4703551 - Process for forming LDD MOS/CMOS structures (1987-11-03),
4. 4701423 - Totally self-aligned CMOS process (1987-10-20),
5. 4682404 - MOSFET process using implantation through silicon (1987-07-28),
6. 4679299 - Formation of self-aligned stacked CMOS structures by lift-off (1987-07-14),
7. 4654121 - Fabrication process for aligned and stacked CMOS devices (1987-03-31),
8. 4648175 - Use of selectively deposited tungsten for contact formation and shunting (1987-03-10),
9. 4647340 - Programmable read only memory using a tungsten fuse (1987-03-03),

Title: Innovations of Nicholas J Szluk

Introduction

Nicholas J Szluk is a prominent inventor based in Fort Collins, CO (US). He has made significant contributions to the field of integrated devices, holding a total of 9 patents. His work focuses on advancing the technology of field effect transistors and CMOS integrated devices.

Latest Patents

Among his latest patents is a method of making CMOS integrated devices in seeded islands. This patent describes a structure of a pair of concentrically disposed field effect transistors that are responsive to a common gate electrode. The process involves a dielectric region surrounded by an active region of monocrystalline silicon, with a layer of recrystallized silicon situated upon the dielectric region as a second active region. The gate electrode overlies both active regions, serving as a mask to form self-aligned channels. This innovative design facilitates recrystallization from seed of monocrystalline silicon, enhancing the operational characteristics of the field effect transistor formed from recrystallized silicon.

Career Highlights

Nicholas J Szluk is currently associated with NCR Corporation, where he continues to develop cutting-edge technologies. His expertise in the fabrication of integrated devices has positioned him as a key player in the industry.

Collaborations

He has collaborated with notable coworkers, including Gayle W Miller and Werner A Metz, Jr. Their combined efforts contribute to the advancement of technology in their field.

Conclusion

Nicholas J Szluk's innovative work in the realm of integrated devices and field effect transistors showcases his dedication to technological advancement. His contributions are significant in shaping the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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