The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 1987
Filed:
Oct. 23, 1986
Gayle W Miller, Colorado Springs, CO (US);
Nicholas J Szluk, Albuquerque, NM (US);
George Maheras, Fort Collins, CO (US);
Werner A Metz, Jr, Fort Collins, CO (US);
NCR Corporation, Dayton, OH (US);
Abstract
A simplified small geometry MOS process incorporates a tungsten shunt layer on the thin silicon gate electrode layer allowing reduction of the thickness of the silicon layer and the use of an implant through the layer to form precisely controlled shallow source/drain regions without channeling. Lightly doped extension of the source and drain regions are automatically formed by an LDD implant following an isotropic undercutting etch of the silicon. The process is readily adapted to optional guard band implants and other beneficial structures such as gate sidewall oxide spacers.