Fort Collins, CO, United States of America

Werner A Metz, Jr

This inventor holds 5 USPTO granted patents. Top assignee: Ncr Corporation. Active years: 1986-1987.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Werner A Metz, Jr. Retrieved from https://idiyas.com/inventor/werner-a-metz-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.9

ph-index = 5

Forward Citations = 126(Granted Patents)


Company Filing History:


Years Active: 1986-1987

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5 patents (USPTO):Explore Patents

Title: **Werner A Metz, Jr: Innovator in Semiconductor Technology**

Introduction

Werner A Metz, Jr. is a notable inventor based in Fort Collins, Colorado, recognized for his contributions to semiconductor technology. With five patents to his name, Metz has made significant advancements in methods and processes that enhance the efficiency and effectiveness of electronic components.

Latest Patents

Among his latest innovations, Metz developed a patent for a **MOSFET process using implantation through silicon**. This simplified small geometry MOS process introduces a tungsten shunt layer on a thin silicon gate electrode, facilitating the reduction of silicon layer thickness. This method allows for the precise formation of shallow source/drain regions without channeling, making it a vital contribution to the semiconductor field.

Another noteworthy patent is the **method for forming channel stops in vertical semiconductor surfaces**. This technique involves creating channel stops in the sidewalls of trench isolation structures within a semiconductor substrate. The method uses anisotropically etched substrate trenches that are conformally covered by doped glass. The subsequent anisotropic etching retains vertical segments of this doped glass, which are essential in forming shallow diffusions in the trench sidewalls.

Career Highlights

Werner A Metz, Jr. is currently employed at NCR Corporation, where he continues to innovate and push the boundaries of semiconductor technology. His expertise in this specialized field has played a crucial role in the advancement of electronic devices that rely heavily on efficient semiconductor processes.

Collaborations

Throughout his career, Metz has worked alongside esteemed colleagues such as Nicholas J Szluk and Gayle W Miller. Their collaboration has contributed to the depth of innovation at NCR Corporation, leveraging their combined expertise to tackle complex challenges in semiconductor design and manufacturing.

Conclusion

In conclusion, Werner A Metz, Jr. stands out as a significant figure in semiconductor innovation, with his latest patents showcasing his commitment to advancing technology. His work at NCR Corporation and collaborations with fellow inventors highlight the importance of teamwork in driving forward innovations that shape the future of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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