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For the Inventor, By the Inventor

Taoyuan County, Taiwan

Nian-Kai Zous

USPTO Granted Patents = 11

Average Co-Inventor Count = 3.8

ph-index = 4

Forward Citations = 95(Granted Patents)


Location History:

  • Tauyuan Hsien, TW (2002 - 2004)
  • Ping Zhen, TW (2007 - 2009)
  • Taoyuan, TW (2009 - 2011)
  • Taoyuan County, TW (2010 - 2012)

Company Filing History:

goldMedal11 out of 3,595 
 
Macronix International Co., Ltd.
 patents

Years Active: 2002-2012

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11 patents (USPTO):Explore Patents
1. 8111547 - Multi-bit flash memory and reading method thereof (2012-02-07),
2. 7961513 - Method for programming a multilevel memory (2011-06-14),
3. 7643337 - Multi-bit flash memory and reading method thereof (2010-01-05),
4. 7596028 - Variable program and program verification methods for a virtual ground memory in easing buried drain contacts (2009-09-29),
5. 7580292 - Method for programming a multilevel memory (2009-08-25),
6. 7187590 - Method and system for self-convergent erase in charge trapping memory cells (2007-03-06),
7. 6812099 - Method for fabricating non-volatile memory having P-type floating gate (2004-11-02),
8. 6720614 - Operation method for programming and erasing a data in a P-channel sonos memory cell (2004-04-13),
9. 6563752 - Qualification test method and circuit for a non-volatile memory (2003-05-13),
10. 6512710 - Reliability test method and circuit for non-volatile memory (2003-01-28),
11. 6445614 - Accelerated testing method and circuit for non-volatile memory (2002-09-03),

Title: Nian-Kai Zous: Innovator in Multi-Bit Flash Memory Technology

Introduction

Nian-Kai Zous is a prominent inventor based in Taoyuan County, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 11 patents. His work focuses on enhancing the efficiency and functionality of flash memory systems.

Latest Patents

Among his latest innovations is a patent for a multi-bit flash memory and a reading method thereof. This invention provides multiple reference memory cells for saving reserved data, which operate in conjunction with data memory cells. The method involves sensing data stored in the reference memory cell based on a present reference current before reading the data memory cells. A new reference current is then determined according to the difference between the sensed data and the reserved data. Another notable patent is a method for programming a multilevel memory, which includes a systematic approach to programming bits of memory with varying voltage levels.

Career Highlights

Nian-Kai Zous is currently employed at Macronix International Co., Ltd., where he continues to develop innovative memory solutions. His expertise in memory technology has positioned him as a key figure in the industry, contributing to advancements that enhance data storage capabilities.

Collaborations

He has collaborated with notable colleagues, including I-Jen Huang and Wen-Jer Tsai, to further research and develop cutting-edge memory technologies.

Conclusion

Nian-Kai Zous is a distinguished inventor whose work in multi-bit flash memory technology has made a significant impact in the field. His innovative patents and collaborations reflect his commitment to advancing memory technology.

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