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San Jose, CA, United States of America

Neil Smith

This inventor holds 80 USPTO granted patents and 2 published patent applications and 1 EPO patent, primarily in Magnetoresistive Memory (CPC class 360113). Top assignees: Eastman-Kodak Company, Hitachi Global Storage Technologies Netherlands B.v., Hgst Netherlands, B.v.. Active years: 1990-2025.

USPTO Granted Patents = 80 (Patent Applications = 2)

% Patents Active = 61.3

EPO Patents = 1 (Patent Applications = 2)

Average Co-Inventor Count = 2.4

ph-index = 19

Forward Citations = 1,220(Granted Patents)

Forward Citations (Not Self Cited) = 1,175(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

San Diego, CA (US) (1990 - 1998)
San Jose, CA (US) (2002 - 2022)

Company Filing History:

25 out of 21,604

Eastman-Kodak Company

24 out of 2,636

Hitachi Global Storage Technologies Netherlands B.v.

Hgst Netherlands, B.v.

4. 7 out of 5,427

Western Digital Technologies, Inc.

5. 4 out of 4,943

Sandisk Technologies Inc.

6. 2 out of 166,325

International Business Machines Corporation

Years Active: 1990-2025

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Areas of Expertise:

Spin-Transfer Torque

Magnetoresistive Memory

Current-Perpendicular-To-The-Plane

Multiferroic Devices

Giant Magnetoresistance

Anomalous Hall Effect

Heat Assisted MRAM

Three-Terminal Design

Magnetic Read Sensor

MIMO Recording

Spin-Torque Oscillator

Extraordinary Magnetoresistive

80 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12283296 - Spin-transfer torque magnetoresistive memory device with a free layer stack including multiple spacers and methods of making the same (2025-04-21),

2. 11276446 - Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same (2022-03-15),

3. 11264562 - Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same (2022-03-01),

4. 11031058 - Spin-transfer torque magnetoresistive memory device with a free layer stack including multiple spacers and methods of making the same (2021-06-08),

5. 10777248 - Heat assisted perpendicular spin transfer torque MRAM memory cell (2020-09-15),

6. 10381552 - SOT MRAM cell with perpendicular free layer and its cross-point array realization (2019-08-13),

7. 10290337 - Three terminal SOT memory cell with anomalous hall effect (2019-05-14),

8. 10229723 - Spin orbit torque magnetoresistive random access memory containing composite spin hall effect layer including beta phase tungsten (2019-03-12),

9. 10211393 - Spin accumulation torque MRAM (2019-02-19),

10. 10134457 - Cross-point spin accumulation torque MRAM (2018-11-20),

11. 9830966 - Three terminal SOT memory cell with anomalous Hall effect (2017-11-28),

12. 9305579 - Fabrication of side-by-side sensors for MIMO recording (2016-04-05),

13. 9299370 - MIMO read head with soft bias and split shield (2016-03-29),

14. 9293160 - Magnetic stabilization and scissor design for anomalous hall effect magnetic read sensor (2016-03-22),

15. 9236069 - Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with reduced-width self-aligned top electrode (2016-01-12),

Title: Top Inventor in San Jose

Introduction: Shan Liu is recognized as a leading inventor in San Jose, contributing significantly to various technological advancements.

Latest Patents: Shan Liu holds several recent patents that showcase innovative solutions in his field.

Career Highlights: Throughout his career, Liu has achieved numerous milestones that highlight his expertise and impact on technology.

Collaborations: He has collaborated with various organizations and professionals, enhancing the scope of his inventions.

Conclusion: Shan Liu's contributions continue to shape the landscape of innovation in San Jose and beyond.

Profile summary based on public USPTO records.

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