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For the Inventor, By the Inventor

San Jose, CA, United States of America

Neil Smith

USPTO Granted Patents = 80 

 

Average Co-Inventor Count = 2.4

ph-index = 19

Forward Citations = 1,213(Granted Patents)

Forward Citations (Not Self Cited) = 1,175(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • San Diego, CA (US) (1990 - 1998)
  • San Jose, CA (US) (2002 - 2022)

Company Filing History:

goldMedal25 out of 21,594 
 
Eastman-kodak Company
 patents
silverMedal24 out of 2,636 
 
Hitachi Global Storage Technologies Netherlands B.v.
 patents
bronzeMedal18 out of 987 
 
Hgst Netherlands, B.v.
 patents
4. 7 out of 5,313 
 
Western Digital Technologies, Inc.
 patents
5. 4 out of 4,549 
 
Sandisk Technologies Inc.
 patents
6. 2 out of 164,197 
 
International Business Machines Corporation
 patents

Years Active: 1990-2025

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Areas of Expertise:
Spin-Transfer Torque Memory
Magnetoresistive Sensors
Multiferroic Memory Devices
MIMO Recording Technology
Giant Magnetoresistance
Spin Orbit Torque MRAM
Current-Perpendicular-To-The-Plane Sensors
Anomalous Hall Effect
Magnetic Read Sensors
Extraordinary Magnetoresistive Devices
Perpendicular Magnetic Recording
Magnetic Transducers
80 patents (USPTO):Explore Patents
1. 12283296 - Spin-transfer torque magnetoresistive memory device with a free layer stack including multiple spacers and methods of making the same (2025-04-21),
2. 11276446 - Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same (2022-03-15),
3. 11264562 - Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same (2022-03-01),
4. 11031058 - Spin-transfer torque magnetoresistive memory device with a free layer stack including multiple spacers and methods of making the same (2021-06-08),
5. 10777248 - Heat assisted perpendicular spin transfer torque MRAM memory cell (2020-09-15),
6. 10381552 - SOT MRAM cell with perpendicular free layer and its cross-point array realization (2019-08-13),
7. 10290337 - Three terminal SOT memory cell with anomalous hall effect (2019-05-14),
8. 10229723 - Spin orbit torque magnetoresistive random access memory containing composite spin hall effect layer including beta phase tungsten (2019-03-12),
9. 10211393 - Spin accumulation torque MRAM (2019-02-19),
10. 10134457 - Cross-point spin accumulation torque MRAM (2018-11-20),
11. 9830966 - Three terminal SOT memory cell with anomalous Hall effect (2017-11-28),
12. 9305579 - Fabrication of side-by-side sensors for MIMO recording (2016-04-05),
13. 9299370 - MIMO read head with soft bias and split shield (2016-03-29),
14. 9293160 - Magnetic stabilization and scissor design for anomalous hall effect magnetic read sensor (2016-03-22),
15. 9236069 - Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with reduced-width self-aligned top electrode (2016-01-12),

Title: Top Inventor in San Jose

Introduction: Shan Liu is recognized as a leading inventor in San Jose, contributing significantly to various technological advancements.

Latest Patents: Shan Liu holds several recent patents that showcase innovative solutions in his field.

Career Highlights: Throughout his career, Liu has achieved numerous milestones that highlight his expertise and impact on technology.

Collaborations: He has collaborated with various organizations and professionals, enhancing the scope of his inventions.

Conclusion: Shan Liu's contributions continue to shape the landscape of innovation in San Jose and beyond.

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