This inventor holds 4 USPTO granted patents. Top assignee: Ibiden Company Limited. Active years: 2013-2016.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2013-2016
Title: Naomi Fujita: Innovator in Semiconductor Technology
Introduction
Naomi Fujita is a prominent inventor based in Ogaki, Japan. She has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. Her work focuses on innovative solutions for semiconductor devices, showcasing her expertise and dedication to advancing technology.
Latest Patents
Fujita's latest patents include a substrate for mounting semiconductors, which features a first insulation layer with a penetrating hole. This design incorporates an electrode with a protruding portion, a first conductive pattern, and a second insulation layer. The second layer also has a penetrating hole and a second conductive pattern for mounting semiconductor elements. This innovative approach enhances the efficiency and functionality of semiconductor devices.
Career Highlights
Naomi Fujita is currently employed at Ibiden Company Limited, where she continues to develop cutting-edge technologies in the semiconductor industry. Her work has been instrumental in creating advanced materials and methods that improve semiconductor performance.
Collaborations
Fujita collaborates with talented coworkers, including Toshiki Furutani and Daiki Komatsu. Together, they contribute to the innovative projects at Ibiden Company Limited, pushing the boundaries of semiconductor technology.
Conclusion
Naomi Fujita's contributions to semiconductor technology exemplify her innovative spirit and commitment to excellence. Her patents and collaborative efforts continue to shape the future of the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile