The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

Jun. 04, 2014
Applicant:

Ibiden Co., Ltd., Ogaki-shi, JP;

Inventors:

Toshiki Furutani, Ogaki, JP;

Daiki Komatsu, Ogaki, JP;

Masatoshi Kunieda, Ogaki, JP;

Naomi Fujita, Ogaki, JP;

Nobuya Takahashi, Ogaki, JP;

Assignee:

IBIDEN CO., LTD., Ogaki-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/12 (2006.01); H05K 1/11 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/14 (2006.01); H01L 23/28 (2006.01); H05K 1/02 (2006.01);
U.S. Cl.
CPC ...
H05K 1/113 (2013.01); H01L 21/4857 (2013.01); H01L 21/568 (2013.01); H01L 23/147 (2013.01); H01L 23/28 (2013.01); H01L 23/3128 (2013.01); H01L 23/49822 (2013.01); H01L 23/562 (2013.01); H01L 24/82 (2013.01); H05K 1/0298 (2013.01); H01L 2224/131 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/81192 (2013.01); H01L 2924/00013 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/351 (2013.01);
Abstract

A substrate for mounting a semiconductor includes a first insulation layer having first and second surfaces on the opposite sides and having a penetrating hole penetrating through the first insulation layer, an electrode formed in the penetrating hole in the first insulation layer and having a protruding portion protruding from the second surface of the first insulation layer, a first conductive pattern formed on the first surface of the first insulation layer and connected to the electrode, a second insulation layer formed on the first surface of the first insulation layer and the first conductive pattern and having a penetrating hole penetrating through the second insulating layer, a second conductive pattern formed on the second insulation layer and for mounting a semiconductor element, and a via conductor formed in the penetrating hole in the second insulation layer and connecting the first and second conductive patterns.


Find Patent Forward Citations

Loading…