IDiyas

For the Inventor, By the Inventor

Tokyo, Japan

Naoko Ono

USPTO Granted Patents = 13

Average Co-Inventor Count = 3.3

ph-index = 6

Forward Citations = 142(Granted Patents)


Company Filing History:

goldMedal13 out of 52,711 
 
Kabushiki Kaisha Toshiba
 patents

Years Active: 1997-2013

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13 patents (USPTO):
1. 8598699 - Semiconductor device having a ground metal layer through which at least one hole is formed, and a ground patch disposed in the at least one hole (2013-12-03),
2. 8253245 - Communication device (2012-08-28),
3. 8041368 - Mobile communications terminal, service area calculation apparatus and method of calculating service area (2011-10-18),
4. 7539485 - Apparatus and method for mapping a location of wireless base stations in a mobile communication system (2009-05-26),
5. 7305232 - Apparatus and method for mapping a location of wireless base stations in a mobile communication system (2007-12-04),
6. 7292866 - Mobile communications terminal, service area calculation apparatus and method of calculating service area (2007-11-06),
7. 7120417 - Mobile communications terminal, service area calculation apparatus and method of calculating service area (2006-10-10),
8. 7034631 - Symmetric microwave filter and microwave integrated circuit merging the same (2006-04-25),
9. 6934557 - Portable type radio equipment (2005-08-23),
10. 6876270 - Symmetric microwave filter and microwave integrated circuit merging the same (2005-04-05),
11. 6455880 - Microwave semiconductor device having coplanar waveguide and micro-strip line (2002-09-24),
12. 5914536 - Semiconductor device and soldering portion inspecting method therefor (1999-06-22),
13. 5631809 - Semiconductor device for ultrahigh frequency band and semiconductor (1997-05-20),

Title: Naoko Ono: Innovator in Semiconductor Technology

Introduction

Naoko Ono is a prominent inventor based in Tokyo, Japan. She has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. Her innovative work has paved the way for advancements in communication devices and semiconductor devices.

Latest Patents

One of her latest patents is a semiconductor device that features a ground metal layer with at least one hole formed through it, along with a ground patch located within that hole. This invention includes a substrate, a dielectric layer, and multiple ground metal layers, each with distinct DC potentials. Another notable patent is for a communication device that incorporates an antenna for transmitting and receiving high-frequency signals, a semiconductor chip for processing these signals, and a substrate with various wirings for power and signal transmission.

Career Highlights

Naoko Ono is currently employed at Kabushiki Kaisha Toshiba, where she continues to innovate and develop new technologies. Her work has been instrumental in enhancing the performance and efficiency of semiconductor devices.

Collaborations

She has collaborated with notable coworkers, including Hiroki Shoki and Ichiro Seto, contributing to various projects that have furthered the field of semiconductor technology.

Conclusion

Naoko Ono's contributions to semiconductor technology and communication devices highlight her role as a leading inventor in her field. Her innovative patents and collaborations continue to influence advancements in technology.

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