Kabushiki Kaisha Toshiba

Naoko Ono

Hiroshi Yoshida

Hiroki Shoki

Ichiro Seto

Kuniaki Ito

Shuichi Sekine

Takehiko Toyoda

Keiichi Yamaguchi

Yuji Iseki

Eiji Takagi

Hiroyuki Kayano

Hiroshi Yamada

Kazuhiro Inoue

Toshiya Mitomo

Akihiro Tsujimura

Yasushi Murakami

Kazuki Tateyama

Kunio Yoshihara

Yasushi Shizuki

Noriaki Odachi

Shu-ichi Sekine

Takayoshi Itoh

Junko Onomura

In one embodiment, there is provided a semiconductor device that includes: a substrate; a dielectric layer on the substrate; a first ground metal layer embedded in the dielectric layer and having a first DC potential, the first ground metal layer having a first hole therethrough; a first ground patch disposed in the first hole; a second ground metal layer embedded in the dielectric layer such that the dielectric layer is interposed between the first and second ground metal layers in a thickness direction of the dielectric layer, the second ground metal layer having a second DC potential and having a second hole therethrough; a second ground patch disposed in the second hole; a first via which electrically connects the first ground metal layer and the second ground patch; and a second via which electrically connects the second ground metal layer and the first ground patch.

Semiconductor device having a ground metal layer through which at least one hole is formed, and a ground patch disposed in the at least one hole

A communication device according to an embodiment includes an antenna transmitting/receiving a high frequency signal, a semiconductor chip having four corners and four sides processing the high frequency signal, and a substrate on which a first wiring connected to ground, a second wiring supplying power to the semiconductor chip, a third wiring connected to a protection element or circuit of the semiconductor chip, and fourth wirings transmitting a signal from the semiconductor chip are formed by plating, and the semiconductor chip is mounted.

Communication device

A mobile communications terminal includes positional information generator configured to generate positional information indicating a current position of the terminal, receiver which receives identification information sent from the base station of the second mobile communication network, notification information generator configured to generate notification information including the identification information and the positional information generated at the time of receiving the identification information, and transmitter which transmits the notification information to the service area calculation apparatus via the first mobile communication network to derive the information concerning the service area.

Mobile communications terminal, service area calculation apparatus and method of calculating service area

An apparatus used in a first mobile communication system with a plurality of wireless base stations, the first mobile communication system operated by a first provider, the apparatus including an acquiring unit, a location detecting unit configured to detect a present location of the apparatus, a storing unit configured to store first service location information with respect to the first provider, and a location information providing unit configured to calculate locally a location of the plurality of wireless base stations using the detected present location of the apparatus stored in the storing unit. The location information providing unit is configured to provide a user with information based on the first service location information and the second service location information.

Apparatus and method for mapping a location of wireless base stations in a mobile communication system

The present invention is intended to provide a mobile communication terminal permitting a user to obtain location information of wireless base station which provides contents data in certain areas. The terminal accumulates identification information of wireless base stations when wireless services are received. The invention has functions of interrelating the identification information with location information of the terminal when the services are received and of storing both kinds of information. Wireless LAN service areas are displayed together with map information.

A microwave filter is disposed on a substrate. The microwave filter is adapted for connecting a first microwave transmission line to a second microwave transmission line, configured such that a signal propagates from the first to second microwave transmission lines. The microwave filter encompasses a highpass component of filter disposed in a symmetrical configuration with respect to a median plane placed perpendicular to the surface of the substrate, including the central axis of the first and second microwave transmission lines; and a lowpass component of filter connected parallel with the highpass component of filter, the lowpass component of filter being disposed in a symmetrical configuration with respect to the median plane.

Symmetric microwave filter and microwave integrated circuit merging the same

In a radio equipment of portable type, the impedance of an antenna is optimized by adjusting a matching circuit which has the adjustment function and is connected to an antenna, based on a reflection phase sent back from the antenna, outputted from a reflection phase detector, and a current supplied to a transmitter-receiver which generates a transmitting signal.

Portable type radio equipment

A microwave filter is disposed on a substrate. The microwave filter is configured to connect a first microwave transmission line to a second microwave transmission line, configured such that a signal propagates from the first microwave transmission line to the second microwave transmission line. The microwave filter encompasses a highpass component of filter disposed in a symmetrical configuration with respect to a median plane placed perpendicular to the surface of the substrate, including the central axis of the first and second microwave transmission lines; and a lowpass component of filter connected parallel with the highpass component of filter, the lowpass component of filter being disposed in a symmetrical configuration with respect to the median plane.

A high frequency semiconductor device has a semiconductor substrate such as the semi-insulating GaAs; a first metal layer disposed above the semiconductor substrate; a first dielectric thin film disposed on the first metal layer; and a second metal layer having a second metal strip disposed on the first dielectric thin film. Here, the first metal layer has a first metal strip, first and second ground metal plates sandwiching the first metal strip. And the first dielectric thin film is not disposed uniformly on the surface of the first ground metal plate so that the dielectric structure on the first metal strip differs from the dielectric structure under the second metal strip. The CPW is constituted by the first metal strip, the first and second ground metal plates, and the TFMSL is constituted by the second metal strip and the first ground metal plate. By employing the structure such that there is no dielectric thin film on the CPW portion, or that the thickness of the dielectric thin film on the CPW portion is configured to be less than the thickness of the dielectric thin film associated with the TFMSL portion, the effective dielectric constant &isin; of the CPW portion is made lower than that of the conventional CPW, which employs a uniform and homogenous dielectric structure so that the CPW portion has the same thickness of the TFMSL portion. As the result, the adjustable range of the characteristic impedance Z of the high frequency transmission line, merged in the high frequency semiconductor integrated circuit, increases. Then the high-performance integrated circuits such as MMICs having the low transmission loss, the low crosstalk can be achieved.

Microwave semiconductor device having coplanar waveguide and micro-strip line

A semiconductor device includes a wiring board having a main surface and a plurality of pad electrodes formed on the main surface, a rectangular semiconductor element having a main surface facing the main surface of the wiring board and mounted on the main surface of the wiring board, a solder resist formed to surround the semiconductor element with a preset distance therefrom on the main surface of the wiring board, a plurality of terminal electrodes formed on the end portion of the main surface of the semiconductor element, and a plurality of solder bumps for electrically connecting the plurality of pad electrodes to the plurality of terminal electrodes with a gap provided between the main surface of the wiring board and the main surface of the semiconductor element, wherein each of the plurality of pad electrodes includes at least a portion which extends from substantially under a corresponding one of the plurality of terminal electrodes of the semiconductor element to the solder resist lying outside the semiconductor element and each of the plurality of solder bumps includes a portion extending over part of a corresponding one of the plurality of pads which lies outside the semiconductor element.

Semiconductor device and soldering portion inspecting method therefor

A semiconductor device comprising a semiconductor chip, a sheet-like metal member electrically connected to a major surface of the semiconductor chip and serving as a ground electrode for the chip, and input/output electrodes electrically connected to the semiconductor chip and situated in the same plane as that of the sheet-like metal member, the chip, the metal member, and the input/output electrodes being encapsulated in an electrically insulating member having a bottom surface and adapted to be mounted on a surface of a circuit board. The sheet-like metal member is brought out from inside the electrically insulating member without being bent and has its one end face situated in substantially the same plane as the bottom surface of the electrically insulating member which faces to the surface of the circuit board when the metal member is mounted on the circuit board and the major surface of the chip is approximately prependicular to the end face of the sheet-like metal member.

Growing community of inventors

Tokyo, Japan

Naoko Ono