Yokohama, Japan

Naoki Hanada


Average Co-Inventor Count = 2.0

ph-index = 5

Forward Citations = 119(Granted Patents)


Company Filing History:


Years Active: 1992-1994

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5 patents (USPTO):Explore Patents

Title: Naoki Hanada: Innovator in Semiconductor Technology

Introduction

Naoki Hanada is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on the development of advanced semiconductor devices, particularly involving MOSFETs and nonvolatile memory cells.

Latest Patents

Hanada's latest patents include innovative designs for semiconductor devices that integrate n-channel MOSFETs, p-channel MOSFETs, and nonvolatile memory cells on the same semiconductor substrate. These devices are engineered to enhance performance and efficiency, with the n-channel MOSFET formed in a p-type well region and the p-channel MOSFET in an n-type well region of the substrate.

Career Highlights

Throughout his career, Naoki Hanada has been associated with Kabushiki Kaisha Toshiba, where he has played a crucial role in advancing semiconductor technologies. His expertise and innovative approach have positioned him as a key figure in the industry.

Collaborations

Hanada has collaborated with notable colleagues, including Teruo Uemura and Takahide Mizutani, contributing to various projects that push the boundaries of semiconductor research and development.

Conclusion

Naoki Hanada's contributions to semiconductor technology exemplify his dedication to innovation and excellence. His patents reflect a deep understanding of complex electronic systems, making him a valuable asset in the field.

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