This inventor holds 5 USPTO granted patents. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1992-1994.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1992-1994
Title: Naoki Hanada: Innovator in Semiconductor Technology
Introduction
Naoki Hanada is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on the development of advanced semiconductor devices, particularly involving MOSFETs and nonvolatile memory cells.
Latest Patents
Hanada's latest patents include innovative designs for semiconductor devices that integrate n-channel MOSFETs, p-channel MOSFETs, and nonvolatile memory cells on the same semiconductor substrate. These devices are engineered to enhance performance and efficiency, with the n-channel MOSFET formed in a p-type well region and the p-channel MOSFET in an n-type well region of the substrate.
Career Highlights
Throughout his career, Naoki Hanada has been associated with Kabushiki Kaisha Toshiba, where he has played a crucial role in advancing semiconductor technologies. His expertise and innovative approach have positioned him as a key figure in the industry.
Collaborations
Hanada has collaborated with notable colleagues, including Teruo Uemura and Takahide Mizutani, contributing to various projects that push the boundaries of semiconductor research and development.
Conclusion
Naoki Hanada's contributions to semiconductor technology exemplify his dedication to innovation and excellence. His patents reflect a deep understanding of complex electronic systems, making him a valuable asset in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile