The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1993
Filed:
Oct. 10, 1990
Applicant:
Inventors:
Teruo Uemura, Kawasaki, JP;
Takahide Mizutani, Yokohama, JP;
Naoki Hanada, Yokohama, JP;
Tatsuo Mori, Katsuta, JP;
Kazuyoshi Shinada, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; G11C / ;
U.S. Cl.
CPC ...
257315 ; 365185 ;
Abstract
An E.sup.2 PROM and an EPROM are formed on the same substrate. An E.sup.2 PROM memory cell has a floating gate and a control gate. A tunnel insulating film is formed between the floating gate and source/drain regions, thereby constituting a memory cell of an 'FLOTOX' type. An EPROM memory cell has a floating gate and a control gate, thus constituting a memory cell of an 'SAMOS' type.