The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 1994
Filed:
Apr. 06, 1993
Applicant:
Inventors:
Teruo Uemura, Kawasaki, JP;
Naoki Hanada, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257316 ; 257326 ; 257371 ; 257377 ;
Abstract
An n-channel MOSFET, a p-channel MOSFET and a nonvolatile memory cell are provided for the same semiconductor substrate. The nonvolatile memory cell is formed on the semiconductor substrate, the n-channel MOSFET is formed in a p-type well region of the semiconductor substrate, and the p-channel MOSFET is formed in an n-type well region of the semiconductor substrate.