IDiyas

For the Inventor, By the Inventor

Tokyo, Japan

Nam Hai Pham

USPTO Granted Patents = 9 

Average Co-Inventor Count = 4.3

ph-index = 1


Company Filing History:

goldMedal6 out of 5,310 
 
Western Digital Technologies, Inc.
 patents
silverMedal5 out of 566 
 
Tokyo Institute of Technology
 patents
bronzeMedal1 out of 9 
 
Institute of Science Tokyo
 patents
where one patent can have more than one assignee

Years Active: 2023-2025

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9 patents (USPTO):Explore Patents
1. 12487296 - Spin orbit torque based thermal sensor for insitu monitoring of magnetic recording head (2025-12-02),
2. 12412597 - Non-localized spin valve multi-free-layer reader hybridized with spin orbit torque layers (2025-09-09),
3. 12394432 - Non-localized spin valve reader hybridized with spin orbit torque layer (2025-08-19),
4. 12354627 - Higher areal density non-local spin orbit torque (SOT) writer with topological insulator materials (2025-07-08),
5. 12279534 - Spin injection source, magnetic memory, spin hall oscillator, computer, and magnetic sensor (2025-04-14),
6. 12154603 - Spin-orbit torque (SOT) writer with topological insulator materials (2024-11-26),
7. 11990868 - Spin hall oscillator (2024-05-21),
8. 11875827 - SOT reader using BiSb topological insulator (2024-01-16),
9. 11637234 - Manufacturing method for multilayer structure of magnetic body and BiSb layer, magnetoresistive memory, and pure spin injection source (2023-04-25),

Title: Inventor Spotlight: Nam Hai Pham

Introduction:

Nam Hai Pham is an innovative inventor based in Tokyo, Japan, who has made significant contributions in the field of spin-based technologies. With a total of 3 patents under his name, Nam Hai Pham continues to push the boundaries of technological advancements.

Latest Patents:

1. Spin Hall Oscillator: Nam Hai Pham's patented oscillator features a unique design with a spin current source and a free layer coupled to the spin current source. The free layer's magnetization hard axis is parallel to the quantization axis of the spin current injected by the spin Hall effect of the spin current source.

2. SOT Reader Using BiSb Topological Insulator: This innovative SOT device includes a non-magnetic layer, a free layer in contact with the non-magnetic layer, and a bismuth antimony (BiSb) layer over the free layer. By optimizing the thickness of the non-magnetic layer and BiSb layer, the read gap of each SOT device is reduced, enabling large inverse spin Hall angles and high signal-to-noise ratios.

Career Highlights:

Nam Hai Pham has garnered experience and expertise through his work at prestigious institutions. He has been associated with the Tokyo Institute of Technology, where he has honed his skills in research and development. Additionally, his professional journey includes a tenure at Western Digital Technologies, Inc., a renowned technology company known for its contributions to the storage industry.

Collaborations:

Throughout his career, Nam Hai Pham has collaborated with talented individuals in the field. Notable coworkers include Huynh Duy Khang Nguyen and Quang Le, who have worked alongside Nam Hai Pham on various innovative projects. Through collaboration, Nam Hai Pham has been able to leverage diverse perspectives and expertise to drive his inventions forward.

Conclusion:

Nam Hai Pham stands as a pioneering inventor in Tokyo, Japan, with a remarkable portfolio of patents in spin-based technologies. His dedication to innovation and collaboration underscores his commitment to pushing the boundaries of technological advancement, making him a key player in the field of inventions and patents.

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