The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Mar. 25, 2022
Western Digital Technologies, Inc., San Jose, CA (US);
Tokyo Institute of Technology, Tokyo, JP;
Quang Le, San Jose, CA (US);
Brian R. York, San Jose, CA (US);
Xiaoyong Liu, San Jose, CA (US);
Son T. Le, San Jose, CA (US);
Cherngye Hwang, San Jose, CA (US);
Michael A. Gribelyuk, San Jose, CA (US);
Xiaoyu Xu, San Jose, CA (US);
Kuok San Ho, Emerald Hills, CA (US);
Hisashi Takano, San Jose, CA (US);
Julian Sasaki, Tokyo, JP;
Huy H. Ho, Tokyo, JP;
Khang H. D. Nguyen, Tokyo, JP;
Nam Hai Pham, Tokyo, JP;
Western Digital Technologies, Inc., San Jose, CA (US);
Abstract
The present disclosure generally relate to spin-orbit torque (SOT) devices. The SOT devices each comprise a non-magnetic layer, a free layer disposed in contact with the non-magnetic layer, and a bismuth antimony (BiSb) layer disposed over the free layer. The non-magnetic layer has a thickness of about 0.5 nm to about 2 nm. The BiSb layer has a thickness of about 5 nm to about 10 nm. The BiSb layer and the free layer have collective thickness between about 5 nm to about 20 nm. By reducing the thickness of the non-magnetic layer and BiSb layer, a read gap of each SOT device is reduced while enabling large inverse spin Hall angles and high signal-to-noise ratios.