The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Aug. 03, 2023
Applicants:

Western Digital Technologies, Inc., San Jose, CA (US);

Tokyo Institute of Technology, Tokyo, JP;

Inventors:

Quang Le, San Jose, CA (US);

Xiaoyong Liu, San Jose, CA (US);

Cherngye Hwang, San Jose, CA (US);

Brian R. York, San Jose, CA (US);

Son T. Le, San Jose, CA (US);

Sharon Swee Ling Banh, San Jose, CA (US);

Maki Maeda, Fujisawa, JP;

Fan Tuo, Fujisawa, JP;

Yu Tao, Fujisawa, JP;

Hisashi Takano, Fujisawa, JP;

Nam Hai Pham, Tokyo, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/31 (2006.01); G11B 5/127 (2006.01); G11B 5/235 (2006.01); G11B 5/37 (2006.01); G11B 5/00 (2006.01);
U.S. Cl.
CPC ...
G11B 5/314 (2013.01); G11B 5/1278 (2013.01); G11B 5/235 (2013.01); G11B 5/37 (2013.01); G11B 2005/0024 (2013.01);
Abstract

The present disclosure generally relates to a magnetic media drive comprising a magnetic recording head. The magnetic recording head comprises a main pole disposed at a media facing surface (MFS), a shield disposed at the MFS, a spin blocking layer disposed between the shield and the main pole, at least one non-magnetic layer disposed between the main pole and the shield, the at least one non-magnetic layer being disposed at the MFS, and at least one spin orbit torque (SOT) layer disposed over the at least one non-magnetic layer, the SOT layer being recessed a distance of about 20 nm to about 100 nm from the MFS. A ratio of a length of the SOT layer to a thickness of the SOT layer is greater than 1. The at least one SOT layer comprises BiSb.


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