The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2023
Filed:
Sep. 14, 2018
Applicant:
Tokyo Institute of Technology, Tokyo, JP;
Inventors:
Nam Hai Pham, Tokyo, JP;
Huynh Duy Khang Nguyen, Tokyo, JP;
Assignee:
TOKYO INSTITUTE OF TECHNOLOGY, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/04 (2006.01); H01L 27/22 (2006.01); H01L 43/06 (2006.01); H01L 43/10 (2006.01); H01L 43/14 (2006.01);
U.S. Cl.
CPC ...
H01L 43/04 (2013.01); H01L 27/228 (2013.01); H01L 43/06 (2013.01); H01L 43/10 (2013.01); H01L 43/14 (2013.01);
Abstract
A magnetoresistive memory cell includes an MTJ element including a magnetization free layer and a pure spin injection source. The pure spin injection source includes a BiSb layer coupled to the magnetization free layer. By flowing an in-plane current through the BiSb layer, this arrangement is capable of providing magnetization reversal of the magnetization free layer.