Fishkill, NY, United States of America

Nagashyamala R Dhanwada

USPTO Granted Patents = 12 

Average Co-Inventor Count = 3.9

ph-index = 4

Forward Citations = 45(Granted Patents)


Location History:

  • Wappingers Falls, NY (US) (2004 - 2012)
  • Fishkill, NY (US) (2014 - 2019)
  • Tenafly, NJ (US) (2019 - 2022)

Company Filing History:


Years Active: 2004-2022

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12 patents (USPTO):

Title: Innovations of Nagashyamala R Dhanwada

Introduction

Nagashyamala R Dhanwada is a prominent inventor based in Fishkill, NY (US). He holds a total of 12 patents, showcasing his significant contributions to the field of technology and innovation. His work primarily focuses on improving the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest patents is a method for generating a contributor-based power abstract for a device. This innovative approach includes identifying a clock power component for each of a plurality of clock gating domains, determining the switching characteristics for these domains, and performing simulations to calculate effective capacitance. Another notable patent involves characterizing and simulating library gates to identify and mitigate electromigration violations in semiconductor chips. This method enhances the performance of computers by analyzing extracted netlists and generating critical tables for maximum slew rate and capacitance.

Career Highlights

Nagashyamala has worked with renowned companies such as IBM and Globalfoundries Inc. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to advancements in semiconductor technology.

Collaborations

He has collaborated with notable coworkers, including Arun Joseph and William W Dungan, further enriching his professional journey and expanding his impact in the field.

Conclusion

Nagashyamala R Dhanwada's contributions to technology through his patents and collaborations highlight his role as a significant inventor in the semiconductor industry. His innovative methods continue to influence the development of efficient electronic devices.

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