The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Jan. 14, 2014
International Business Machines Corporation, Armonk, NY (US);
Nagashyamala R. Dhanwada, Fishkill, NY (US);
Anand Haridass, Bangalore, IN;
Arun Joseph, Bangalore, IN;
Charles R. Lefurgy, Austin, TX (US);
Diwesh Pandey, Bangalore, IN;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A system, method and computer program product for enabling efficient and accurate post-silicon leakage power characterization of semiconductor chips at very high temperatures. The system and method can be used to estimate dynamic power usage at a sub-component level. The system and method determines leakage power during test time while running a workload in a manner such that a wider range of temperatures can be characterized on a tester that does not have precise temperature control, i.e., does not require or use external heaters. Additional power management functionality for a semiconductor device is provided while running a workload that breaks down total power measured into workload dependent and workload-independent subcomponents.