Nabil Badereddine

Title: Nabil Badereddine: Innovator in Design-for-Test Technologies

Introduction

Nabil Badereddine is a prominent inventor based in Grasse, France. He has made significant contributions to the field of design-for-test (DFT) technologies, holding a total of 4 patents. His work focuses on enhancing the reliability and efficiency of SRAM memory systems.

Latest Patents

Badereddine's latest patents include innovative designs for DFT apparatuses and techniques. One of his notable inventions is a DFT apparatus that incorporates an SRAM cell along with read/write (R/W) circuitry. This apparatus is designed to provide nominal word line (WL) and bit line (BL) voltages during memory accesses. Additionally, the DFT apparatus features test circuitry that can switch between activated and deactivated states, allowing for different voltage applications to the SRAM cell. Another significant patent involves assist circuits for SRAM testing, which enable voltage scaling in low-power SRAMs. These circuits improve read stability and write margin by selectively modifying voltages along specific circuit elements to identify potential defects.

Career Highlights

Throughout his career, Nabil Badereddine has worked with leading technology companies, including Intel Corporation and Intel Deutschland GmbH. His experience in these organizations has allowed him to develop and refine his innovative ideas in the field of memory technology.

Collaborations

Badereddine has collaborated with notable professionals in the industry, including Patrick Girard and Alberto Bosio. These collaborations have contributed to the advancement of his research and the successful development of his patented technologies.

Conclusion

Nabil Badereddine is a distinguished inventor whose work in design-for-test technologies has made a significant impact on the field of SRAM memory systems. His innovative patents and collaborations with industry experts highlight his commitment to advancing technology.