logo

For the Inventor, By the Inventor

Newburgh, NY, United States of America

Murshed Mahmud Chowdhury

This inventor holds 10 USPTO granted patents and 3 published patent applications. Top assignees: International Business Machines Corporation, Freescale Semiconductor,inc., Globalfoundries U.S. 2 LLC. Active years: 2012-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Murshed Mahmud Chowdhury. Retrieved from https://idiyas.com/inventor/murshed-mahmud-chowdhury

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10 

% Patents Active = 30.0

Average Co-Inventor Count = 3.3

ph-index = 3

Forward Citations = 21(Granted Patents)


Location History:

  • Newburgh, NY (US) (2012 - 2015)
  • Schenectady, NY (US) (2016 - 2020)

Company Filing History:

goldMedal7 out of 166,409 
 
International Business Machines Corporation
 patents
silverMedal2 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
bronzeMedal1 out of 59 
 
Globalfoundries U.S. 2 LLC
 patents

Years Active: 2012-2020

Loading Chart...
10 patents (USPTO):Explore Patents
1. 10672907 - Channel region dopant control in fin field effect transistor (2020-06-02),
2. 9379185 - Method of forming channel region dopant control in fin field effect transistor (2016-06-28),
3. 9190418 - Junction butting in SOI transistor with embedded source/drain (2015-11-17),
4. 9171758 - Method of forming transistor contacts (2015-10-27),
5. 8952460 - Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices (2015-02-10),
6. 8941189 - Fin-shaped field effect transistor (finFET) structures having multiple threshold voltages (Vt) and method of forming (2015-01-27),
7. 8853792 - Transistors and semiconductor devices with oxygen-diffusion barrier layers (2014-10-07),
8. 8829616 - Method and structure for body contacted FET with reduced body resistance and source to drain contact leakage (2014-09-09),
9. 8809152 - Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices (2014-08-19),
10. 8114739 - Semiconductor device with oxygen-diffusion barrier layer and method for fabricating same (2012-02-14),

Title: The Innovative Mind of Murshed Mahmud Chowdhury

Introduction:

Murshed Mahmud Chowdhury is a visionary inventor based in Newburgh, NY, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents:

Murshed Mahmud Chowdhury holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating a more efficient and eco-friendly world.

Career Highlights:

With a background in engineering and computer science, Murshed Mahmud Chowdhury has led numerous research projects that have resulted in cutting-edge inventions. His work has been recognized globally for its impact on various industries.

Collaborations:

Throughout his career, Murshed Mahmud Chowdhury has collaborated with leading tech companies, research institutions, and universities to further develop his inventions and bring them to market. His collaborative spirit has been instrumental in the success of many projects.

Conclusion:

Murshed Mahmud Chowdhury's passion for innovation and dedication to creating a sustainable future through technology make him a true pioneer in the field of inventions. His work continues to inspire and shape the world we live in today.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…