The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Mar. 31, 2014
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Murshed Mahmud Chowdhury, Newburgh, NY (US);
Woo-Hyeong Lee, Poughquag, NY (US);
Aimin Xing, Fishkill, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); H01L 21/76802 (2013.01); H01L 21/76814 (2013.01); H01L 21/76831 (2013.01);
Abstract
Embodiments of the present invention provide an improved method for forming transistor contacts. A sacrificial layer is deposited in a first set of contact cavities, and a capping layer is formed on the sacrificial layer. This protects the first set of contact cavities during formation of a second set of contact cavities. The sacrificial layer is then removed, and the first and second sets of contact cavities are filled with a conductive material.