For the Inventor, By the Inventor

Enter inventor name

Princeton, NJ, United States of America

Murray Henderson Woods

USPTO Granted Patents = 6

Average Co-Inventor Count = 1.5

ph-index = 6

Forward Citations = 96(Granted Patents)

Location History:

Princeton, NJ (US) (1977)
Los Gatos, CA (US) (1977)
Palo Alto, CA (US) (1979 - 1981)

Company Filing History:

Years Active: 1977-1981

Loading Chart...

6 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 4307411 - Nonvolatile semiconductor memory device and method of its manufacture (1981-12-22),

2. 4236167 - Stepped oxide, high voltage MOS transistor with near intrinsic channel (1980-11-25),

3. 4168432 - Method of testing radiation hardness of a semiconductor device (1979-09-18),

4. 4057824 - P+ Silicon integrated circuit interconnection lines (1977-11-08),

5. 4014772 - Method of radiation hardening semiconductor devices (1977-03-29),

6. 4007294 - Method of treating a layer of silicon dioxide (1977-02-08),

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…