Murray Henderson Woods is a notable inventor based in Princeton, NJ (US). He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work has advanced the development of nonvolatile memory devices, showcasing his expertise and innovative spirit.

Latest Patents

One of his latest patents is for a nonvolatile semiconductor memory device and method of its manufacture. This invention involves an MNOS nonvolatile semiconductive memory device that features a thick gate insulating layer overlapping the source and drain regions, along with a thin gate insulator layer in the memory portion. This design includes a region of relatively high concentration of impurities, enhancing the threshold voltage window of the device. Another significant patent is for a stepped oxide, high voltage MOS transistor with a near intrinsic channel. This Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) incorporates a dual thickness oxide layer, optimizing the performance of the channel region and improving the overall functionality of the transistor.

Career Highlights

Murray Woods has had a distinguished career at RCA Inc., where he has been instrumental in developing cutting-edge technologies. His innovative approaches have led to advancements in semiconductor devices, making a lasting impact on the industry.

Collaborations

Throughout his career, Woods has collaborated with notable colleagues, including Richard Jean Williams and James E. Carnes. These partnerships have fostered a creative environment that has contributed to the success of their projects.

Conclusion

Murray Henderson Woods is a prominent figure in the field of semiconductor innovation, with a strong portfolio of patents that reflect his expertise. His contributions continue to influence the development of advanced memory devices and semiconductor technologies.

Profile summary based on public USPTO records.

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