The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 1977
Filed:
Apr. 30, 1976
Applicant:
Inventor:
Murray Henderson Woods, Princeton, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 56 ; 357-4 ; 357 23 ; 357 54 ; 357 59 ; 357 68 ;
Abstract
An improved interconnecting line for an integrated circuit comprising a P+ silicon island having an optional first layer of silicon dioxide or a like material thereon and a second layer of silicon nitride or a like material adjacent the first layer, is provided. The line may be manufactured by improvements in the standard P channel MOS or MNOS processing method wherein the line is formed concomitantly with the island upon definition of the silicon. The line may be subsequently coated with silicon dioxide during formation of a gate oxide for a MNOS device and then coated with silicon nitride.