The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 1977
Filed:
Mar. 08, 1976
Applicant:
Inventors:
Murray Henderson Woods, Princeton, NJ (US);
Richard Williams, Princeton, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 39 ; 148-15 ; 148186 ; 204164 ; 357 52 ; 427 82 ; 427 93 ; 427377 ; 427379 ;
Abstract
A layer of silicon dioxide such as used in an MOS gate dielectric, is treated, after growth, to prevent deleterious effects resulting from any mobile impurity ions therein. An ionic fluoride compound is applied to one surface of the layer of silicon dioxide. A corona discharge is then directed from a negative electrode of a pair of electrodes of opposite polarity onto the fluoride compound to drive the fluoride ions into the layer. The layer is then washed and annealed.