The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 1977
Filed:
Apr. 24, 1975
Applicant:
Inventors:
Murray Henderson Woods, Los Gatos, CA (US);
Richard Williams, Princeton, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
C25D / ; G01N / ;
U.S. Cl.
CPC ...
2041 / ; 65 3 / ; 204130 ; 2041 / ; 250283 ;
Abstract
An electronic device, such as a metal-oxide-semiconductor (MOS) transistor, is radiation hardened by removing impurities such as sodium and other alkali species, from the oxide. The impurities are first caused to migrate to the surface of the oxide by exposure to electromagnetic radiation having an energy greater than the oxide band gap while the oxide is immersed in an electric field. The impurities are then rinsed from the surface of the oxide with a solvent.